Memory
chips may one day rely on organic compounds to store information,
just like that gray matter in your brain. In the past few
months, several research groups reported promising organic
memory prototypes—from devices that function as dynamic
random-access memories (DRAMs) to high-capacity, nonrewritable
storage media similar to CD-ROMs. Organics won't make your
computer any more powerful, but because they don't require
clean-room fabrication and endless rounds of photolithography
to produce, they might make memory chips and other storage
devices much easier to manufacture—and therefore
much cheaper.
Organics
enthusiasts hope to open a crack in the US $27 billion
market for semiconductor memories. But their approach is
not to offer all-organic devices. Instead, to ease the
technology's adoption, they plan to mesh their materials
with existing silicon processing technology.
Among
the chief challenges in developing such hybrid devices
is finding organic compounds that don't simply burn to
cinders when submitted to the extreme manufacturing and
operating conditions required for today's silicon electronics.
Recently, scientists at the University of California, Riverside,
reported finding one such material, an organic molecule
known as porphyrin, which works as a charge-storage element
and occurs naturally as part of hemoglobin and chlorophyll.
Application
of relatively low voltages to a synthetic version of porphyrin
make it switch back and forth from an electrically neutral
to a positive charge, so that the two electronic states
can encode the zeros and ones of digital information, says
David Bocian, a chemistry professor at Riverside. A single
layer of porphyrin, in effect, could replace the capacitor
in standard silicon DRAMs, which is more costly to produce.
Bocian
and co-workers have shown that a layer of porphyrin molecules
on top of a silicon substrate can work as a memory device
that survives temperatures up to 400 °C, a condition
typically encountered during the manufacturing of silicon
chips. Just as important, the device can undergo trillions
of read/write cycles, a requirement of DRAMs in real-world
operation. What's more, porphyrin holds its charge for
minutes instead of the tens of milliseconds of a traditional
DRAM.
That
advantage should reduce power consumption substantially,
because the chip will not have to refresh its memory cells
nearly as often. Start-up ZettaCore Inc., in Denver, Colo.,
of which Bocian is a founder, is already testing porphyrin-based
prototype memory chips and working to implement first-generation
products in the next couple of years.
In Another organics
effort, electrical engineering professor and IEEE Fellow
Stephen Forrest, at Princeton University, in New Jersey,
also adopted a hybrid approach. But instead of a rewritable
memory, his group teamed up with researchers at Hewlett-Packard
Laboratories (H-P Labs), in Palo Alto, Calif., to build
a prototype write-once-read-many-times (WORM) device. The
permanent media could be used as very low cost—even
disposable—high-capacity storage devices for images,
for example.
The
organic molecule used by the Princeton researchers is a
conductive polymer known by the acronym PEDOT, which normally
is employed as an antistatic coating on television screens
and electronics packaging, to form a fuse. When enough
current is put through it, the polymer changes its conductivity
state permanently—going from conducting to insulating.
A blown fuse, then, can be read as a zero and an intact
fuse as a one. Each 1-bit PEDOT memory cell is 100-200
nanometers in diameter, about one-fifth the area required
to store a bit on a CD. A million bits could fit into a
square millimeter of paper-thin material, and layers could
be stacked on top of each other, considerably increasing
storage density.
"We
have read these things thousands of times, and no changes have
been observed."
The
device consists of an array of crisscrossed electrodes
with a PEDOT fuse and a silicon thin-film diode sandwiched
between them at each crossing point [see diagram, "Minuscule
Memory"]. Manufacturing such arrays should be cheap,
since it uses inexpensive raw material and has none of
the pricier chip-making requirements, such as a clean-room
environment or multiple rounds of photolithography. It
could eventually be done with simple pattern-printing technology.
Also,
unlike CD drives, PEDOT devices require no moving read
heads for writing and reading bits. A memory element is
instead read by applying a test voltage to a row and measuring
the current flowing from a column. "So you read the entire
array quickly by scanning this test voltage from row to
row while observing currents flowing in the column lines," says
Forrest. "We have read these things thousands of times,
and no changes have been observed." Further tests are necessary,
he says, under different environmental conditions, and
if everything goes right, the memory could be available
within five years or so.
The
Semiconductor Industry has
shown much interest in organic memories, because it is
getting prohibitively expensive to maintain the growth
in performance of memory chips with current silicon technology.
Big companies such as Intel, AMD, IBM, and Philips have
in-house groups working on organic memory devices or have
partnered with university groups and start-ups in the field. "There's
an extreme need for new technologies," says Bob Merritt,
a vice president at semiconductor-industry research company
Semico Research Corp. in Phoenix, Ariz.
A possible
market entry point for such new memory technologies, Merritt
says, is applications that are mobile and for which battery
life is crucial. Today's most sophisticated cellphones,
for example, package multiple types of memory, each useful
for a particular function—one for data applications,
another to store the phone's software, a third for high-speed
communications processes. "That's a packaging solution
to a semiconductor problem," he says. Ultimately, organic
compounds could have the right properties to lead to a
cheaper and more power-efficient "universal memory" that
would replace all others.